HBA114TS6R
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HBA114TS6R

SKU: HBA114TS6R
HBA114TS6R Transistor Silicon PNP CASE: SOT363R MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT363R
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code 0E
Built in Bias Resistor R1 10 kOhm
SKU 1432557
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