HBA143ES6R
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HBA143ES6R

SKU: HBA143ES6R
HBA143ES6R Transistor Silicon PNP CASE: SOT363R MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT363R
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code 0J
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1432558
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