HBC114ES6R
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HBC114ES6R

SKU: HBC114ES6R
HBC114ES6R Transistor Silicon Pre-Biased-NPN CASE: SOT363R MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT363R
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SMD Transistor Code 7A
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1432564
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