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HBCA123JS6R
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HBCA123JS6R

SKU: HBCA123JS6R
HBCA123JS6R Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT363R MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT363R
Manufacturer Generic
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code 35
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 1432583
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