The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HBDM60V600W
View detailed images (4)

HBDM60V600W

SKU: HBDM60V600W
HBDM60V600W Transistor Silicon NPN - PNP CASE: SOT363 MAKE: Generic
Datasheet
HBDM60V600W Datasheet
Product specifications
Type Transistor Silicon NPN - PNP
Case SOT363
Manufacturer Diodes
Polarity NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 5.5 V
Maximum Collector Current |Ic max| 0.5 A
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code HB01
SKU 1432598
Back