HBNP5213G6
View detailed images (1)

HBNP5213G6

SKU: HBNP5213G6
HBNP5213G6 Transistor Silicon NPN - PNP CASE: Standard MAKE: Generic
Product specifications
Type Transistor Silicon NPN - PNP
Case Standard
Manufacturer Generic
Polarity NPN*PNP
Maximum Collector Power Dissipation (Pc) 1.14 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6(11) pF
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 180
SMD Transistor Code 5213
SKU 1432614
Back