HBNPZ1NS6R
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HBNPZ1NS6R

SKU: HBNPZ1NS6R
HBNPZ1NS6R Transistor Silicon NPN - PNP CASE: SOT363R MAKE: Generic
Product specifications
Type Transistor Silicon NPN - PNP
Case SOT363R
Manufacturer Generic
Polarity NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 6(5) V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2(4) pF
Transition Frequency (ft): 80(60) MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code BF
SKU 1432616
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