HD1A4M
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HD1A4M

SKU: HD1A4M
HD1A4M Transistor Silicon NPN CASE: SOT89 MAKE: NEC
Datasheet
HD1A4M Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer NEC
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code LS
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 709069
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