HD1F2Q
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HD1F2Q

SKU: HD1F2Q
HD1F2Q Transistor Silicon NPN CASE: SOT89 MAKE: NEC
Datasheet
HD1F2Q Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer NEC
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code LU
Built in Bias Resistor R1 0.22 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 709068
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