| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
SOT89 |
| Manufacturer |
NEC |
| Polarity |
Pre-Biased-NPN |
| Maximum Collector Power Dissipation (Pc) |
2 W |
| Maximum Collector-Base Voltage |Vcb| |
80 V |
| Maximum Collector-Emitter Voltage |Vce| |
60 V |
| Maximum Emitter-Base Voltage |Veb| |
10 V |
| Maximum Collector Current |Ic max| |
1 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Forward Current Transfer Ratio (hFE), MIN |
200 |
| SMD Transistor Code |
L_LQ |
| Built in Bias Resistor R1 |
2.2 kOhm |
| Built in Bias Resistor R2 |
10 kOhm |
| Typical Resistor Ratio R1/R2 |
0.22 |
| SKU |
709067 |