HEP637

SKU: HEP637

HEP637 Transistor - Case: TO72 Make: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Germanium PNP
Case	TO72
Manufacturer	Motorola Semiconductor
Vbr CBO	20
Vbr CEO	15
Max. PD (W)	150m
hfe	120
Ic Max. (A)	10m
Icbo Max. @Vcb Max. (A)	5.0u-
Polarity	PNP
Trans. Freq (Hz) Min.	800M
@VCE (test) (V)	10i
Oper. Temp (°C) Max.	100
Pinout Equivalence Number	4-20
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	20 V
Maximum Collector-Emitter Voltage \|Vce\|	15 V
Maximum Collector Current \|Ic max\|	0.01 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	800 MHz
Forward Current Transfer Ratio (hFE), MIN	120
SKU	553288

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