The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HEPG0011
View detailed images (4)

HEPG0011

SKU: HEPG0011
HEPG0011 Transistor Germanium NPN CASE: TO18 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Germanium NPN
Case TO18
Manufacturer Motorola Semiconductor
Vbr CBO 25
Vbr CEO 15
Max. PD (W) 150m
Derate (Amb) (W/°C) 2.5m
hfe 70
Ic Max. (A) 300m
Icbo Max. @Vcb Max. (A) 6.0u
Polarity NPN
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 100
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 25 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 100 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SKU 554525
Back