HEPS0013

SKU: HEPS0013

HEPS0013 Transistor Silicon PNP CASE: TO18 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	Motorola Semiconductor
Vbr CBO	30
Vbr CEO	30
Max. PD (W)	400m
Derate (Amb) (W/°C)	2.6m
hfe	95
Ic Max. (A)	200m
Icbo Max. @Vcb Max. (A)	200n
Polarity	PNP
Trans. Freq (Hz) Min.	200M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.4 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Collector Current \|Ic max\|	0.2 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	200 MHz
Forward Current Transfer Ratio (hFE), MIN	95
SKU	554555

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