The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HEPS0019
View detailed images (12)

HEPS0019

SKU: HEPS0019
HEPS0019 Transistor Silicon PNP CASE: TO92 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer Motorola Semiconductor
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 310m
Derate (Amb) (W/°C) 2.8m
hfe 200
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 500n
Polarity PNP
Trans. Freq (Hz) Min. 300M
Oper. Temp (°C) Max. 135
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.31 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 135 °C
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SKU 554560
Back