HEPS3009

SKU: HEPS3009

HEPS3009 Transistor Silicon NPN CASE: SOT120 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT120
Manufacturer	Motorola Semiconductor
Vbr CBO	36
Vbr CEO	36
Max. PD (W)	80
Min hFE	10
Ic Max. (A)	6.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
Derate Above 25°C	640m
Trans. Freq (Hz) Min.	175M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	4-28
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	80 W
Maximum Collector-Base Voltage \|Vcb\|	36 V
Maximum Collector-Emitter Voltage \|Vce\|	36 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	175 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	554585

Back