The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HEPS3010
View detailed images (13)

HEPS3010

SKU: HEPS3010
HEPS3010 Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor
Price:
£14.39 Inc. VAT (£11.99 Ex. VAT)
£14.39 Inc. VAT (£11.99 Ex. VAT)
Qty
  • 10 pieces in 1-2 Days
  • More pieces shipped in 14 days
?
Product specifications
Type Transistor Silicon NPN
Case TO39
Manufacturer Motorola Semiconductor
Vbr CBO 70
Vbr CEO 60
Max. PD (W) 10
t(f) Max. (S) 500n
Max. hFE 100
Min hFE 20
Ic Max. (A) 4.0
@Ic (test) (A) 4.0
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Tr Max. (s) 100n
R(sat) (Û) 250m
Derate Above 25°C 57m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 70 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 554586
Back