HEPS3011

SKU: HEPS3011

HEPS3011 Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Motorola Semiconductor
Vbr CBO	80
Vbr CEO	50
Max. PD (W)	1.0
Min hFE	100-
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	200n
Polarity	NPN
Derate Above 25°C	5.7m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	554587

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