HEPS3012

SKU: HEPS3012

HEPS3012 Transistor Silicon PNP CASE: TO39 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO39
Manufacturer	Motorola Semiconductor
Vbr CBO	70
Vbr CEO	50
Max. PD (W)	7.0
Derate (Amb) (W/°C)	40m
Min hFE	100
Ic Max. (A)	1.0
Icbo Max. @Vcb Max. (A)	200n
Polarity	PNP
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	7 W
Maximum Collector-Base Voltage \|Vcb\|	70 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	554588

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