HEPS3019

SKU: HEPS3019

HEPS3019 Transistor Silicon NPN CASE: Standard MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	Standard
Manufacturer	Generic
Vbr CBO	180
Vbr CEO	180
Max. PD (W)	8.0
Min hFE	40
Ic Max. (A)	1.0
@Ic (test) (A)	10m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Derate Above 25°C	54m
Trans. Freq (Hz) Min.	100M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	6 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	180 V
Maximum Collector Current \|Ic max\|	1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	100 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	1282436

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