HEPS3020

SKU: HEPS3020

HEPS3020 Transistor Silicon NPN CASE: Standard MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	Standard
Manufacturer	Generic
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	10
Min hFE	100-
Ic Max. (A)	2.0
@Ic (test) (A)	250m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Derate Above 25°C	80m
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	10 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	100
SKU	1282636

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