HEPS3032
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HEPS3032

SKU: HEPS3032
HEPS3032 Transistor Silicon PNP CASE: Standard MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case Standard
Manufacturer Generic
Vbr CBO 100
Vbr CEO 100
Max. PD (W) 10
Derate (Amb) (W/°C) 80m
Min hFE 140-
Ic Max. (A) 2.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 100M
Oper. Temp (°C) Max. 140
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 100 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 140
SKU 1268085
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