HEPS3035

SKU: HEPS3035

HEPS3035 Transistor Silicon NPN CASE: TO39 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Motorola Semiconductor
Vbr CBO	270
Vbr CEO	270
Max. PD (W)	1.0
Min hFE	35-
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
Derate Above 25°C	6.6m
Trans. Freq (Hz) Min.	150M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	270 V
Maximum Collector-Emitter Voltage \|Vce\|	270 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	150 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	554591

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