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HEPS3050
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HEPS3050

SKU: HEPS3050
HEPS3050 Transistor Silicon PNP CASE: SOT128 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case SOT128
Manufacturer Motorola Semiconductor
Vbr CBO 60
Vbr CEO 60
Max. PD (W) 10
Derate (Amb) (W/°C) 80m
Min hFE 150-
Ic Max. (A) 1.0
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity PNP
Trans. Freq (Hz) Min. 150M
Oper. Temp (°C) Max. 140
Pinout Equivalence Number 4-27
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 150
SKU 554605
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