| Weight |
0.05 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO66 |
| Manufacturer |
Motorola Semiconductor |
| Vbr CBO |
120 |
| Vbr CEO |
120 |
| Max. PD (W) |
40 |
| Min hFE |
60- |
| Ic Max. (A) |
2.0 |
| @Ic (test) (A) |
150m |
| Polarity |
NPN |
| Derate Above 25°C |
266m |
| Trans. Freq (Hz) Min. |
20M |
| Oper. Temp (°C) Max. |
175 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
40 W |
| Maximum Collector-Base Voltage |Vcb| |
120 V |
| Maximum Collector-Emitter Voltage |Vce| |
120 V |
| Maximum Collector Current |Ic max| |
2 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
20 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
60 |
| SKU |
554618 |