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HEPS5019
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HEPS5019

SKU: HEPS5019
HEPS5019 Transistor Silicon NPN CASE: TO66 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon NPN
Case TO66
Manufacturer Motorola Semiconductor
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 25
Min hFE 50-
Ic Max. (A) 4.0
@Ic (test) (A) 500m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 152m
Trans. Freq (Hz) Min. 30M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 25 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 4 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 50
SKU 554623
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