HEPS5022

SKU: HEPS5022

HEPS5022 Transistor Silicon PNP CASE: TO18 MAKE: Motorola Semiconductor

Product specifications

Weight	0.01 kg
Type	Transistor Silicon PNP
Case	TO18
Manufacturer	Motorola Semiconductor
Vbr CBO	60
Vbr CEO	60
Max. PD (W)	1.8
Derate (Amb) (W/°C)	12m
Min hFE	85-
Ic Max. (A)	600m
Icbo Max. @Vcb Max. (A)	3.0n
Polarity	PNP
Trans. Freq (Hz) Min.	275M
Oper. Temp (°C) Max.	175
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	1.8 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	60 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	275 MHz
Forward Current Transfer Ratio (hFE), MIN	85
SKU	554626

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