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HEPS7001
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HEPS7001

SKU: HEPS7001
HEPS7001 Transistor Silicon PNP CASE: TO3 MAKE: Motorola Semiconductor
Product specifications
Type Transistor Silicon PNP
Case TO3
Manufacturer Motorola Semiconductor
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 200
Derate (Amb) (W/°C) 1.1
Min hFE 40-
Ic Max. (A) 25
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 1.0m
Polarity PNP
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 554634
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