HF0100

SKU: HF0100

HF0100 Transistor Silicon NPN CASE: M122 MAKE: Raytheon

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	M122
Manufacturer	Raytheon
Vbr CBO	35
Vbr CEO	25
Max. PD (W)	5.0
Max. hFE	100-
Min hFE	30
Ic Max. (A)	400m
@Ic (test) (A)	75m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	28m
Trans. Freq (Hz) Min.	1.5G
Oper. Temp (°C) Max.	175
@VCE (V)	14
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	5 W
Maximum Collector-Base Voltage \|Vcb\|	30 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	1500 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	1282233

Back