The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HF8004

HF8004

SKU: HF8004
HF8004 Transistor Silicon NPN CASE: M122 MAKE: Raytheon
Product specifications
Type Transistor Silicon NPN
Case M122
Manufacturer Raytheon
Vbr CBO 40
Vbr CEO 30
Max. PD (W) 5.0
Max. hFE 80-
Min hFE 20
Ic Max. (A) 400m
@Ic (test) (A) 75m
Icbo Max. @Vcb Max. (A) 20u
Polarity NPN
Derate Above 25°C 28m
Trans. Freq (Hz) Min. 1.5G
Oper. Temp (°C) Max. 175
@VCE (V) 15
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 1500 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 1282235
Back