HMBT5551
View detailed images (5)

HMBT5551

SKU: HMBT5551
HMBT5551 Transistor Silicon NPN CASE: SOT23 MAKE: Hi-Sincerity Microelectronics
Datasheet
HMBT5551 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer Hi-Sincerity Microelectronics
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.225 W
Maximum Collector-Base Voltage |Vcb| 180 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 541892
Back