HN1A01F
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HN1A01F

SKU: HN1A01F
HN1A01F Transistor Silicon PNP CASE: SOT6 MAKE: Toshiba
Datasheet
HN1A01F Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT6
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code D1G_D1Y
SKU 585559
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