HN1A02F
View detailed images (1)

HN1A02F

SKU: HN1A02F
HN1A02F Transistor Silicon PNP CASE: SM6 MAKE: Generic
Datasheet
HN1A02F Datasheet
Product specifications
Type Transistor Silicon PNP
Case SM6
Manufacturer TOSHIBA
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 15 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code 26G_26Y
SKU 1432720
Back