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HN1A07F
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HN1A07F

SKU: HN1A07F
HN1A07F Transistor Silicon PNP CASE: SOT6 MAKE: Toshiba
Datasheet
HN1A07F Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT6
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code 47
SKU 585560
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