HN1B04F
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HN1B04F

SKU: HN1B04F
HN1B04F Transistor Silicon NPN - PNP CASE: SOT6 MAKE: Toshiba
Datasheet
HN1B04F Datasheet
Product specifications
Type Transistor Silicon NPN - PNP
Case SOT6
Manufacturer Toshiba
Polarity NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 70
SMD Transistor Code 50
SKU 585562
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