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HN1B04FU
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HN1B04FU

SKU: HN1B04FU
HN1B04FU Transistor Silicon NPN - PNP CASE: US6 MAKE: Generic
Datasheet
HN1B04FU Datasheet
Product specifications
Type Transistor Silicon NPN - PNP
Case US6
Manufacturer TOSHIBA
Polarity NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 125 °C
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code 1DY_1DG
SKU 1432725
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