HN1C03F
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HN1C03F

SKU: HN1C03F
HN1C03F Transistor Silicon NPN CASE: SOT6 MAKE: Toshiba
Datasheet
HN1C03F Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT6
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 25 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4.8 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code C3A_C3B
SKU 585563
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