HN2C01FU
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HN2C01FU

SKU: HN2C01FU
HN2C01FU Transistor Silicon NPN CASE: SOT363 MAKE: Toshiba
Datasheet
HN2C01FU Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT363
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code L1G_L1Y
SKU 586205
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