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HN3C51F
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HN3C51F

SKU: HN3C51F
HN3C51F Transistor Silicon NPN CASE: SM6 MAKE: Generic
Datasheet
HN3C51F Datasheet
Product specifications
Type Transistor Silicon NPN
Case SM6
Manufacturer TOSHIBA
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code DG_DL
SKU 1432738
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