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HN3C67FE
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HN3C67FE

SKU: HN3C67FE
HN3C67FE Transistor Silicon NPN CASE: SOT666 MAKE: Toshiba
Datasheet
HN3C67FE Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT666
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 2 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code 72
SKU 586212
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