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HN4A06J
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HN4A06J

SKU: HN4A06J
HN4A06J Transistor Silicon PNP CASE: SOT235a MAKE: Toshiba
Datasheet
HN4A06J Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT235a
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code 53
SKU 585579
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