HN4A56JU
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HN4A56JU

SKU: HN4A56JU
HN4A56JU Transistor Silicon PNP CASE: SOT353 MAKE: Toshiba
Datasheet
HN4A56JU Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT353
Manufacturer Toshiba
Polarity PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.15 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 120
SMD Transistor Code 37
SKU 586213
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