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HN4B101J
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HN4B101J

SKU: HN4B101J
HN4B101J Transistor Silicon NPN - PNP CASE: SOT235a MAKE: Toshiba
Datasheet
HN4B101J Datasheet
Product specifications
Type Transistor Silicon NPN - PNP
Case SOT235a
Manufacturer Toshiba
Polarity NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.55 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 200
SMD Transistor Code 5K
SKU 586214
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