| HN4B102J Datasheet |
| Type | Transistor Silicon NPN - PNP | |
| Case | SOT25 | |
| Manufacturer | TOSHIBA | |
| Polarity | NPN*PNP | |
| Maximum Collector Power Dissipation (Pc) | 0.75 W | |
| Maximum Collector-Base Voltage |Vcb| | 30 V | |
| Maximum Collector-Emitter Voltage |Vce| | 30 V | |
| Maximum Emitter-Base Voltage |Veb| | 7 V | |
| Maximum Collector Current |Ic max| | 2 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 200 | |
| SMD Transistor Code | 5L | |
| SKU | 1432740 | |