The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HN4C05JU
View detailed images (1)

HN4C05JU

SKU: HN4C05JU
HN4C05JU Transistor Silicon NPN CASE: Standard MAKE: Generic
Datasheet
HN4C05JU Datasheet
Product specifications
Type Transistor Silicon NPN
Case Standard
Manufacturer TOSHIBA
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 15 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.4 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 4.2 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code NA_NB
SKU 1432741
Back