HN4C08J

HN4C08J

SKU: HN4C08J
HN4C08J Transistor Silicon NPN CASE: SOT235a MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case SOT235a
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 13 pF
Transition Frequency (ft): 120 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SMD Transistor Code 35
SKU 585584
Back