HPT1012

SKU: HPT1012

HPT1012 Transistor Silicon NPN CASE: TO83 MAKE: International Rectifier - IR

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO83
Manufacturer	International Rectifier - IR
Vbr CEO	120
Max. PD (W)	350
t(f) Max. (S)	2.5u
Min hFE	20
Ic Max. (A)	100
@Ic (test) (A)	50
Icbo Max. @Vcb Max. (A)	2.0m
Polarity	NPN
Tr Max. (s)	2.0u
R(sat) (Û)	25m
Derate Above 25°C	2.0
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	175
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	350 W
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Collector Current \|Ic max\|	100 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	1276127

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