HQ1F3M
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HQ1F3M

SKU: HQ1F3M
HQ1F3M Transistor Silicon NPN CASE: SOT89 MAKE: NEC
Datasheet
HQ1F3M Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer NEC
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 2 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 50
SMD Transistor Code DR
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 706949
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