The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
HSB1109

HSB1109

SKU: HSB1109
HSB1109 Transistor Silicon PNP CASE: TO126ML MAKE: Generic
Datasheet
HSB1109 Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO126ML
Manufacturer Hi-Sincerity Microelectronics
Polarity PNP
Maximum Collector Power Dissipation (Pc) 1.25 W
Maximum Collector-Base Voltage |Vcb| 160 V
Maximum Collector-Emitter Voltage |Vce| 160 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 5.5 pF
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 1432808
Back