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HSB857J
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HSB857J

SKU: HSB857J
HSB857J Transistor Silicon PNP CASE: TO252 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO252
Manufacturer Generic
Polarity PNP
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 3 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 15 MHz
Forward Current Transfer Ratio (hFE), MIN 170
SKU 1432816
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