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HSE2012
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HSE2012

SKU: HSE2012
HSE2012 Transistor Silicon PNP CASE: TO220 MAKE: HSE
Product specifications
Type Transistor Silicon PNP
Case TO220
Manufacturer HSE
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 40
Derate (Amb) (W/°C) 320m
Min hFE 25
@Ic (test) (A) 1.0
Icbo Max. @Vcb Max. (A) 50u
Polarity PNP
Trans. Freq (Hz) Min. 500k
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Max. Operating Junction Temperature (Tj) 140 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 25
SKU 1269283
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